Wafer surface trace impurity analysis is essential for development of competitive Si circuit technologies. Today's grazing incidence x-ray fluorescence techniques with rotating anodes fall short of requirements for the future. Hewlett Packard/Toshiba experiments indicate that with second generation synchrotron sources such as SSRL, the techniques can be extended sufficiently to meet important needs of the leading edge Si circuit industry through nearly all of the 1990's. This workshop was held to identify people interested in use of synchrotron radiation-based methods and to document needs and concerns for further development. Viewgraphs are included for the following presentations: microcontamination needs in silicon technology (M. Liehr), analytical methods for wafer surface contamination (A. Schimazaki), trace impurity analysis of liquid drops using synchrotron radiation (D. Wherry), TRXRF using synchrotron sources (S. Laderman), potential role of synchrotron radiation TRXRF in Si process R D (M. Scott), potenital development of synchrotron radiation facilities (S. Brennan), and identification of goals, needs and concerns (M. Garner). Show Partial Abstract