 DOCUMENT METADATASLAC Publication: SLAC-PUB-16209
SLAC Release Date: February 2, 2015
Enhanced Electrical Transparency by Ultra-Thin LaAlO<sub>3</sub> Insertion at Oxide Metal/Semiconductor Heterointerfaces
Yajima, Takeaki.
We demonstrate that the electrical conductivity of
metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3.
This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic bound... Show Full Abstract
We demonstrate that the electrical conductivity of
metal/semiconductor oxide heterojunctions can be increased over 7 orders of magnitude by inserting an ultrathin layer of LaAlO3.
This counterintuitive result, that an interfacial barrier can be driven transparent by inserting a wide-gap insulator, arises from large internal electric field between the two polar LaAlO3 surfaces. This field modifies the effective band offset in the device, highlighting the ability to design the electrostatic boundary conditions with atomic precision. Show Partial Abstract
Download File:
|
