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SLAC Publication: SLAC-PUB-15009
SLAC Release Date: May 16, 2012
Coexistence of Two- and Three-dimensional Shubnikov-de Haas Oscillations in Ar^+ -irradiated KTaO_3
Harashima, Satoshi.
We report the electron doping in the surface vicinity of KTaO_3 by inducing oxygen-vacancies via Ar^+ -irradiation. The doped electrons have high mobility (> 10^4 cm^2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar^+ -irradiation serves as a flexible tool to study lo... Show Full Abstract
We report the electron doping in the surface vicinity of KTaO_3 by inducing oxygen-vacancies via Ar^+ -irradiation. The doped electrons have high mobility (> 10^4 cm^2/Vs) at low temperatures, and exhibit Shubnikov-de Haas oscillations with both two- and three-dimensional components. A disparity of the extracted in-plane effective mass, compared to the bulk values, suggests mixing of the orbital characters. Our observations demonstrate that Ar^+ -irradiation serves as a flexible tool to study low dimensional quantum transport in 5d semiconducting oxides. Show Partial Abstract
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  • Interest Categories: Material Sciences